GaN quality evolution according to carrier gas for the nucleation layer and buffer layer
نویسندگان
چکیده
منابع مشابه
Growth Investigations of Nitrogen-Polar GaN Nucleation Layer Templates
This study aims at achieving highly crystalline and smooth Nitrogen-polar (N-polar) GaN layers deposited on c-plane sapphire by metal organic vapor phase epitaxy (MOVPE). The influence of nitridation, temperature and V/III ratio on the polarity, quality and coalescence of GaN is systematically investigated. It was observed that the initial nitridation of sapphire before GaN growth is critical f...
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a Department of Materials Science and Engineering, National Chiao Tung University, 1001 Ta Hsueh Rd., 30010 Hsinchu, Taiwan b Department of Electronics Engineering, National Chiao Tung University, 1001 Ta Hsueh Rd., 30010 Hsinchu, Taiwan c Department of Electrical and Computer Engineering, Virginia Tech, Blacksburg, VA 24061, USA d Department of Electrophysics, National Chiao Tung University, 1...
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ژورنال
عنوان ژورنال: Optical Materials Express
سال: 2019
ISSN: 2159-3930
DOI: 10.1364/ome.9.001945